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Cross-Referenz SiC Mosfet

Spezifikation SiC Mosfet 80mOhm Rohm SiC Mosfet 80mOhm Rohm SiC Mosfet 80mOhm Cree SiC Mosfet 80mOhm Cree SiC Mosfet 80mOhm
  SCH2080KE SCT2080KE CMF20120D C2M0080120D SCT30N120
Breakdown Voltage UBr[V] 1200 1200 1200 1200 1200
Drain Current ID [A] @25°C 40 40 42 31,6 40
Drain Current ID [A] @100°C 28 28 24 20 34
Gate Source Volage VGS [V] -6 to 22 -6 to 22 -5 to 25 -10 to 25 -10 to 25
Package Type TO-247 TO-247 TO-247 TO-247 HIP-247
RDS,on [mOhm] @25°C 80 80 80 80 80
RDS,on [mOhm] @125°C 125 125 95 150 90
Power Dissipation PD [W] 262 262 215 208 270
Thermal Resistance Rth,JC [°C/W] 0,44 0,44 0,44 0,6 0,65
Input Capacitance CISS [pF] 1850 2080 1915 950 1700
Operating Junction and Storage Temperature TJ, Tstg [°C] -55 to +175 -55 to +175 -55 to +150 -55 to +150 -55 to +200
Comment w/ external FWD w/o ext. FWD First Generation Second Generation w/o ext. FWD
Forward Current IS [A] @25°C 40 40 n/a n/a n/a
Forward Voltage VSD [V] 1,3 4,6 3,5 3,3 3,5
Reverse Recovery Charge QRR [nC] 60 44 142 165 140